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Wafer Defect Inspection System
6 & 8 inch Silicon Wafer , Sapphire Wafer , SiC wafer
Specifications | |||
Inspection Capability | Particle | Si | Diameter>81nm (/DF, PSL on Si) |
Sapphire, GaAs, InP, LiTaO3 | Diameter≥0.2μm | ||
Pit | Diameter≥3.5um; Depth: >5nm | ||
Bump | Diameter≥3.5um; Height>5nm | ||
Scratch | Depth:10nm;Width: 0.4um; Length:10um | ||
Stain | Diameter≥20um; Height>1nm | ||
PCW | DI water, Ø6mm quick connector | ||
Main Power | AC220V, 10A, 50Hz, 4.0kW | ||
Vacuum | -70kpa~-50kpa, Ø6mm PVC | ||
Compressed air | 0.6MPa ( Oil less ) | ||
Environment | clean rooms above 1000 | ||
Dimension ( L x W x H ) | 2,180 x 1,480 x 2,460 mm | ||
Weight | 1,960kg | ||
